
Si6466ADQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.04
3000
0.03
2400
1800
C iss
0.02
V GS = 2.5 V
V GS = 4.5 V
1200
0.01
0.00
600
0
C rss
C oss
0
6
12
18
24
30
0
4
8
12
16
20
5
I D - Drain Current (A)
On-Resistance vs. Drain Current
1.8
V DS - Drain-to-Source Voltage (V)
Capacitance
4
V DS = 10 V
I D = 8.1 A
1.6
V GS = 10 V
I D = 8.1 A
1.4
3
2
1.2
1.0
0.8
1
0.6
0
0.4
0
4
8
12
16
20
- 50
- 25
0
25
50
75
100
125
150
30
Q g - Total Gate Charge (nC)
Gate Charge
0.05
0.04
T J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
10
T J = 150 °C
T J = 25 °C
0.03
0.02
0.01
I D = 8.1 A
1
0.00
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 71182
S-80682-Rev. C, 31-Mar-08
V GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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3